江若琏

江若琏，女，1943年11月，本科学历，1967 年毕业于南京大学物理系半导体专业。 长期从事教学和半导体新材料及新器件的研究工作。 80 年代进行 Si 、 InP 、 GaAs 等材料界面研究以及 InP 场效应器件研制， 90 年代致力于 SiGe 材料功能结构和光电、微电子器件应用研究， 90 年代末起进行 GaN 材料 , Ⅲ氮化物异质结构物性和光电探测器件研究。 主持 863 、自然基金项目等四项，参加 973 、 863 、攀登计划、自然基金、省重点攻关项目等多项课题。有关工作获国家发明三等奖一项，国家教委科技进步二等奖一项，省科技进步一等奖一项、省部级科技进步奖三项，通过省部级成果鉴定二项，申请获得国家专利三项，发表论文 100 余篇。合作编写教材获国家教委优秀教材二等奖，江苏省优秀教材二等奖。 合作译著一本。 研究方向: 半导体物理,半导体材料与器件 一、论文 1.Temperature characterization of Raman scattering in an AlGaN/GaN heterostructure ,APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,vol.80,no.8,2005 2.Investigation into the energy band diagram and charge distribution in AlGaN/GaN double heterostructures by self-consistent Poisson-Schrodinger calculations ,CHINESE PHYSICS LETTERS,vol.22,no.2,2005 3.A novel InxGa1-xN/InN heterostructure field-effect transistor with extremely high two-dimensional electron-gas sheet density ,SOLID-STATE ELECTRONICS,vol.49,no.2,2005 4.Influence of polarizations and doping in AlGaN barrier on the two-dimensional electron-gas in AIGaN/GaN heterostruture ,ACTA PHYSICA SINICA,vol.53,no.7,2004 5.Influence of AlGaN/GaN interface polarization fields on the properties of photoconductive detectors ,JOURNAL OF APPLIED PHYSICS,vol.95,no.10,2004 6.Study of two-dimensional electron gas in AlN/GaN heterostructure by a self-consistent method ,PHYSICA STATUS SOLIDI B-BASIC RESEARCH,vol.241,no.4,2004 7.Growth of Si1-x-yGexCy alloy layers on Si by chemical vapor deposition,GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY,vol.95-96,2004 8.Strong quantum confinement and high carrier concentration in AlGaN/InGaN/GaN heterostructure field-effect transistors ,APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,vol.77,no.5,2003 9.Photocurrent properties of high-sensitivity GaN ultraviolet,CHINESE PHYSICS,vol.12,no.7,2003 10.High hole mobility in p-strained Si grown on relaxed SiC virtual substrate by low-pressure chemical vapor deposition ,OPTICAL MATERIALS,vol.23,no.1-2,2003 11.Growth and photocurrent property of GaN/anodic alumina/Si,OPTICAL MATERIALS,vol.23,no.1-2,2003 12.Photocurrent property of GaN on the Si photodetector with a nearly polycrystalline alpha-Al2O3 buffer layer,CHINESE PHYSICS LETTERS,vol.19,no.10,2002 13.Interfacial properties of AlN/Si (111) grown by metal-organic chemical vapour deposition ,CHINESE PHYSICS LETTERS,vol.19,no.4,2002 14.Photocurrent properties of the AlGaN/GaN/AlGaN multilayer structure on Si,CHINESE PHYSICS LETTERS,vol.18,no.12,2001 15.Ti/Al/Pt/Au and Al ohmic contacts on Si-substrated GaN ,APPLIED PHYSICS LETTERS,vol.79,no.2,2001 16.Effects of contact barriers on Si-substrated GaN photodetectors ,JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,vol.19,no.1,2001 17.Improvement of metal-ferroelectric-silicon structures without buffer layers between Si and ferroelectric films ,APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,vol.72,no.1,2001 18.Fabrication and characterization of metal-ferroelectric-GaN structures ,MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH,vol.5,suppl.1,2000 19.Aluminum and GaN contacts on Si(111) and sapphire ,APPLIED PHYSICS LETTERS,vol.77,no.20,2000 20.Staircase band gap Si1-xGex/Si photodetectors ,APPLIED PHYSICS LETTERS,vol.77,no.10,2000 21.Metal-semiconductor-metal GaN ultraviolet photodetectors on Si(111) ,APPLIED PHYSICS LETTERS,vol.77,no.3,2000 22.Normal-incidence SiGe/Si photodetectors with different buffer layers ,JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,vol.18,no.3,2000 23.Room-temperature blue luminescence of thermally oxidized Si1-x-yGexCy thin films on Si (100) substrates ,APPLIED PHYSICS LETTERS,vol.75,no.21,1999 24.Studies of metal-ferroelectric-GaN structures ,APPLIED PHYSICS LETTERS,vol.75,no.16,1999 25.Influence of growth conditions on the incorporation of substitutional C in Si1-x-yGexCy alloy on Si by chemical vapor deposition using C2H4 ,APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,vol.68,no.4,1999 26.Study of transient photoconductivity of GaN epilayer grown by metalorganic chemical vapor deposition ,APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,vol.67,no.5,1998 27.Optimum annealing conditions for boron implanted SiGe epilayers ,JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,vol.16,no.5,1998 28.Study on thermal oxidation of Si nanowires ,PHYSICA STATUS SOLIDI A-APPLIED RESEARCH,vol.168,no.2,1998 29.Fabrication of silicon nanowires ,APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,vol.66,no.5,1998 30.Photoelectric properties of Si-Si1-xGex-Ge heterostructures for infrared detector ,CHINESE PHYSICS LETTERS,vol.14,no.11,1997 31.SiGe/Ge heterojunction infrared detector ,JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,vol.15,no.3,1997 32.B-implantation and Annealing for SiGe Epilayers,Semiconducter photonics and Technology,3(4),286(1997) 33.可调节势垒高度的AI/Si1-xGexx肖特基接触，半导体学报，17（7），540，1996 34.SiGe外延层中硼注入和退火研究，半导体光电，17（7），540，1996 35.1.3-1.55μmGeSi异质结构红外探测器的研制，高技术通信，6（11），13，1996 36.Si基Ge0.85Gi0.15异质结光电二极管，半导体光电，21（1），27，2000 37.SiGe/Si红外光电探测器，光电子·激光，11（1），16，2000 38.能隙梯度渐变结构Si1-xGex/Si近红外光探测器，高技术通信，10（6），116，2000 39.Si Ge C/Si Heterojunction photodetectors,南京大学学报，36(1)，116,2000 40.Si基GaN紫外光电探测器研究，功能材料与器件，2000 41.SiGeC三元合金的化学气相淀积生长研究，半导体学报，20（8），650，1999 42.GaN/Si紫外光电探测器，高技术通信，2000 二、通过鉴定的科研成果 1.1996年，“1.3-1.55um GeSi异质结构红外探测器的研制”通过江苏省科委鉴定 二、讲授课程 1.半导体器件原理 2.近代物理实验 三、获奖情况 1.1999年，“快速辐射加热超低压化学气相淀积原子级外延方法与技术”获国家科技发明三等奖 2.1998年，“快速辐射加热超低压化学气相淀积原子级外延方法与技术”获江苏省科技进步三等奖 3.2000年，“光加热低压金属有机化学气相淀积方法和III族氮化物薄膜生长研究”获国家教委科技进步三等奖 四、项目 1.2000.1-2002.12，主持国家自然科学基金项目“Si基GaN紫外线光电探测器” 2.1997.1-2000.12，参加国家自然科学重点基金项目“Si基光电子器件及集成” 联系方式：南京大学物理系 电 话： 025-83685371 传 真： 025-83685476 E-mail ： rljiang@jlonline.com